Microscopic model. Current = number of charge carriers per unit volume × cross-sectional area × drift velocity × charge per carrier.
I=nAve
Drift velocity. Average net velocity of carriers along wire. Usually mm/s — very slow compared to RANDOM thermal motion (~105 m/s).
Signal propagation at near c doesn't require fast individual electrons — it's a chain-reaction effect.
Example. Copper n=8.5×1028/m³, 3 A in 10−6 m²: v≈2.2×10−4 m/s.
Cambridge tip. Drift velocity is much less than thermal velocity — KEY exam misconception.